(China (Mainland))
Product Summary
The RA60H4047M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=60W) attenuates up to 60 dB. The RA60H4047M1’s output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The RA60H4047M1’s nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
Parametrics
RA60H4047M1 absolute maximum ratings: (1)VDD, Drain Voltage: 17 V; (2)VGG, Gate Voltage: 6 V; (3)Pin, Input Power: 100 mW; (4)Pout, Output Power: 80 W; (5)Tcase(OP), Operation Case Temperature Range: -30 to +100℃; (6)Tstg, Storage Temperature Range: -40 to +110℃.
Features
RA60H4047M1 features: (1)Enhancement-Mode MOSFET Transistors (IDD=0 @ VDD=12.5V, VGG=0V); (2)Pout>60W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW; (3)Broadband Frequency Range: 400-470MHz ; (4)Metal shield structure that makes the improvements of spurious radiation simple; (5)Low-Power Control Current IGG=5mA (typ) @ VGG=5V; (6)Module Size: 67 × 18 × 9.9 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 RA60H4047M1 |
Other |
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Data Sheet |
Negotiable |
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