Product Summary

The BLF278 is a VHF push-pull power MOS transistor.

Parametrics

Absolute maximum ratings: (1)VDS, drain-source voltage: 125 V max; (2)VGS, gate-source voltage: ±20 V max; (3)ID, drain current (DC) : 18 A max; (4)Tstg, storage temperature: -65 to 150 ℃; (5)Tj, junction temperature: - 200 ℃ max.

Features

Features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF278
BLF278
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-5: $96.59
5-10: $93.00
10-25: $88.59
25-50: $87.60
BLF278,112
BLF278,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 250W VHF
Data Sheet
0-1: $96.59
1-25: $88.59
BLF278/01,112
BLF278/01,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS
Data Sheet
0-42: $96.54