Product Summary

The BLF278 is a VHF push-pull power MOS transistor.

Parametrics

Absolute maximum ratings: (1)VDS, drain-source voltage: 125 V max; (2)VGS, gate-source voltage: ±20 V max; (3)ID, drain current (DC) : 18 A max; (4)Tstg, storage temperature: -65 to 150 ℃; (5)Tj, junction temperature: - 200 ℃ max.

Features

Features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Gold metallization ensures excellent reliability.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF278,112
BLF278,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 250W VHF
Data Sheet
0-1: $96.59
1-25: $88.59
BLF278/01,112
BLF278/01,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR VHF PWR LDMOS
Data Sheet
0-42: $96.54
BLF278
BLF278
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-5: $96.59
5-10: $93.00
10-25: $88.59
25-50: $87.60