(China (Mainland))
Product Summary
The PTFA211801E is a Thermally-Enhanced High Power RF LDMOS FET. The PTFA211801E is a thermally-enhanced, 180-watt, internally matched LDMOS FET intended for WCDMA applications. It is characaterized for single- and two-carrier WCDMA operation from 2110 to 2170 MHz. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Parametrics
PTFA211801E absolute maximum ratings: (1) Drain-Source Voltage : 65 V; (2) Gate-Source Voltage : -0.5 to + 12 V; (3) Junction Temperature : 200℃; (4) Storage Temperature Range : -40 to +150℃; (5) Thermal Resistance (TCASE = 70℃, 150 W CW) : 0.31℃/W.
Features
PTFA211801E features: (1)Broadband internal matching; (2)Integrated ESD protection; (3)Excellent thermal stability, low HCI drift; (4)Capable of handling 10:1 VSWR @28 V,150 W (CW) output power; (5)Pb-free and RoHS-compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 PTFA211801E V4 |
Infineon Technologies |
Transistors RF MOSFET Power RFP-LDMOS GOLDMOS 8 |
Data Sheet |
Negotiable |
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PTFA211801E V4 R250 |
Infineon Technologies |
Transistors RF MOSFET Power Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz |
Data Sheet |
Negotiable |
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 |
PTFA211801E V5 R250 |
|
FET RF LDMOS 180W H36260-2 |
Data Sheet |
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PTFA211801E V5 |
|
FET RF LDMOS 180W H36260-2 |
Data Sheet |
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