(China (Mainland))
Product Summary
The RD15HVF1 is a Silicon MOSFET Power Transistor. It is specifically designed for VHF/UHF High power amplifiers applications.
Parametrics
Absolute maximum ratings: (1)Drain to source voltage:30V ; (2)Gate to source voltage:+/-20V ; (3)Channel dissipation:48W ; (4)Input power:1.5W ; (5)Drain current:4A ; (6)Channel temperature:150℃; (7)Storage temperature:-40℃ to +150℃; (8)Thermal resistance:2.6℃/W.
Features
Features: (1)High power and High Gain:Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz; Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz ; (2)High Efficiency: 60%typ. on VHF Band ; (3)High Efficiency: 55%typ. on UHF Band .
Diagrams
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 RD15HVF1 |
Other |
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Data Sheet |
Negotiable |
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RD15131121 |
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RD15HVF1 |
Other |
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Data Sheet |
Negotiable |
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RD15FM |
Other |
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Data Sheet |
Negotiable |
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RD15FB3 |
Other |
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Data Sheet |
Negotiable |
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RD15FB2 |
Other |
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Data Sheet |
Negotiable |
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RD15FB1 |
Other |
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Data Sheet |
Negotiable |
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